Seebeck coefficient of silicon nanowire forests doped by thermal diffusion

• Shaimaa Elyamny,
• Elisabetta Dimaggio and
• Giovanni Pennelli

Beilstein J. Nanotechnol. 2020, 11, 1707–1713, doi:10.3762/bjnano.11.153

• Technological Applications (SRTA-City), New Borg El-Arab City, 21934, Alexandria, Egypt 10.3762/bjnano.11.153 Abstract Thermoelectric generators made by large arrays of nanowires perpendicular to a silicon substrate, that is, so-called silicon nanowire forests are fabricated on large areas by an inexpensive

• fabricate large numbers of nanowires with high aspect ratio, perpendicular to a silicon substrate, that is, so-called silicon nanowire (SiNW) forests. The process is very suitable for the large-scale fabrication of nanostructured devices useful for several applications, such as sensing, photovoltaics

• fabricated on the top of a silicon nanowire forest, which can be achieved by copper electrodeposition [18]. 2) The optimum doping concentration of the nanowires for the exploitation of the maximum power factor of silicon [3] needs to be found. Both the Seebeck coefficient and the electrical conductivity

Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

• Mathias Franz,
• Romy Junghans,
• Paul Schmitt,
• Adriana Szeghalmi and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2020, 11, 1439–1449, doi:10.3762/bjnano.11.128

• random structures are typically vertically aligned nanowires, also called nanorods. Silicon nanowire arrays can be designed to have a low reflectance of about 1% in a broad spectral range, depending on their geometry. These silicon structures exhibit efficient light trapping because photons are scattered

• transport and improve the efficiency of the thermoelectric generator [7]. Silicon nanowire arrays are also an emerging anode material for integrated lithium-ion batteries. They have a ten times higher theoretical capacity than graphite and can be used for cells with high energy density. However, these

• metal–insulator–semiconductor or metal–insulator–metal capacitors with a high effective area on a small footprint. The high surface area of a silicon nanowire array can be used to fabricate ion-sensitive field-effect transistors (ISFETs) with a high signal-to-noise ratio. An ISFET is a pH sensing

Revealing the local crystallinity of single silicon core–shell nanowires using tip-enhanced Raman spectroscopy

• Marius van den Berg,
• Ardeshir Moeinian,
• Arne Kobald,
• Yu-Ting Chen,
• Anke Horneber,
• Steffen Strehle,
• Alfred J. Meixner and
• Dai Zhang

Beilstein J. Nanotechnol. 2020, 11, 1147–1156, doi:10.3762/bjnano.11.99

• polarizations of Raman scattering and the photoluminescence from the tip–sample nanogap. Results and Discussion Silicon nanowire core–shell morphology In accordance with the VLS synthesis method (see Experimental section), the utilized Pt catalyst, or finally PtxSiy, remains at the tip of the nanowire during

Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

• Siti Noorhaniah Yusoh and
• Khatijah Aisha Yaacob

Beilstein J. Nanotechnol. 2016, 7, 1461–1470, doi:10.3762/bjnano.7.138

• have been a few studies on the TMAH/IPA anisotropic etching, but the studies have not investigated the etched product. In this paper, we studied TMAH/IPA wet etching for the fabrication of an array of silicon nanowire patterned by AFM lithography on an SOI wafer. We investigate the relationship between

• 4 nm and gaps of 730 nm between the lines. The square-shaped pads with dimensions of 5 × 5 µm were fabricated on the left and right sides of the silicon nanowire array. Later, these patterns were etched using 25 wt % TMAH with different IPA concentrations. The results were then analysed in terms of

• the thickness or height of the fabricated silicon nanowire. Figure 3 shows that the etching depth decreases with the addition of 10 and 20 vol % IPA but then increases at 30 vol %. This trend was the same as that found in the work of Rola and Zubel [28] who explained that only a small amounts of

Simple approach for the fabrication of PEDOT-coated Si nanowires

• Mingxuan Zhu,
• Marielle Eyraud,
• Judikael Le Rouzo,
• Nadia Ait Ahmed,
• Florence Boulc’h,
• Claude Alfonso,
• Philippe Knauth and
• François Flory

Beilstein J. Nanotechnol. 2015, 6, 640–650, doi:10.3762/bjnano.6.65

• in a dark environment. Tilted-view, SEM observations of SiNW samples without tapering (a) and for different tapering times: (b) 10 s, (c) 30 s, (d) 50 s. TEM image of a silicon nanowire obtained using the same conditions as those in Figure 1a. Reflection spectra of SiNWs in the visible spectral range

Review of nanostructured devices for thermoelectric applications

• Giovanni Pennelli

Beilstein J. Nanotechnol. 2014, 5, 1268–1284, doi:10.3762/bjnano.5.141

• properties on one side and material availability, sustainability, technological feasibility on the other side. The most important bottom-up and top-down nanofabrication techniques for large area silicon nanowire arrays, to be used for high efficiency thermoelectric devices, will be presented and discussed

• estimated Z factor for a silicon nanowire 50 nm wide, n-doped 5 × 1019 cm−3, is reported for a comparison with other TE materials. An optimistic value of kph = 0.8 W/mK (ke given by the doping) has been assumed for the numerical estimation of Z. Nanostructured silicon for thermoelectricity In the last years

• if a relaxed lithography, as for example optical lithography, is used for the definition of the initial Wtop. Figure 8 is a composition of SEM images of a typical device based on a top-down fabricated silicon nanowire. The top inset is a overview of the device, showing metal pads, bonded with

Methods for rapid frequency-domain characterization of leakage currents in silicon nanowire-based field-effect transistors

• Tomi Roinila,
• Xiao Yu,
• Jarmo Verho,
• Tie Li,
• Pasi Kallio,
• Matti Vilkko,
• Anran Gao and
• Yuelin Wang

Beilstein J. Nanotechnol. 2014, 5, 964–972, doi:10.3762/bjnano.5.110

• 10.3762/bjnano.5.110 Abstract Silicon nanowire-based field-effect transistors (SiNW FETs) have demonstrated the ability of ultrasensitive detection of a wide range of biological and chemical targets. The detection is based on the variation of the conductance of a nanowire channel, which is caused by the

• methods is verified by experimental measurements from an n-type SiNW FET. Keywords: admittance spectroscopy; excitation design; frequency characterization; frequency response; silicon nanowire; Introduction Recent development in sensing biochemical molecules has been rapid. Among many sensing

• technologies, silicon nanowire (SiNW)-based field-effect transistors (FETs) [1] are one of the most promising building blocks for the next generation of electrical circuits in recognizing a wide range of biological and chemical targets. They have been successfully used in the detection of DNA [2], pH [3

A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator

• Denis E. Presnov,
• Sergey V. Amitonov,
• Pavel A. Krutitskii,
• Valentina V. Kolybasova,
• Igor A. Devyatov,
• Vladimir A. Krupenin and
• Igor I. Soloviev

Beilstein J. Nanotechnol. 2013, 4, 330–335, doi:10.3762/bjnano.4.38

• , Moscow 119991, Russia Keldysh Institute of Applied Mathematics, Moscow 125047, Russia 10.3762/bjnano.4.38 Abstract Background: An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented. Results: A maximum

• be useful for biological and medical applications. A demonstration of such a local probe based on a vapour–liquid–solid-method (VLS) grown silicon-nanowire (SiNW) FET was given in [7]. The sensitivity of this bioprobe to pH change near its maximum value of 59 mV per unit pH was reached and the

Radiation-induced nanostructures: Formation processes and applications

• Michael Huth

Beilstein J. Nanotechnol. 2012, 3, 533–534, doi:10.3762/bjnano.3.61

• , or in the form of focused electron beams following a maskless approach for pattern definition in a radiation-sensitive resist, also commonly known as electron beam lithography. Examples of this are found in this Thematic Series covering the topics of selected-area silicon nanowire growth by the vapor